| PART |
Description |
Maker |
| FDS8962C |
30V Dual N & P-Channel PowerTrench MOSFET
Dual N & P-Channel Power Trench
|
Fairchild Semiconductor Corporation
|
| FDMD8280 |
Dual N-Channel Power Trench? MOSFET
|
Fairchild Semiconductor
|
| FDME1024NZT |
Dual N-Channel Power Trench MOSFET
|
Fairchild Semiconductor
|
| FDD16AN08A0 FDD16AN08A0NL |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 75V, 50A, 0.016 Ohms @ VGS = 10V, TO-252/DPAK Package 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel UltraFET Trench MOSFET 75V/ 50A/ 16m
N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhm
N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз
N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDMS3006SDC |
N-Channel Dual CoolTM Power Trench? SyncFETTM 30 V, 49 A, 1.9 mΩ
|
Fairchild Semiconductor
|
| FDMS2504SDC |
N-Channel Dual Cool-TM Power Trench SyncFet-TM 25V, 49A, 1.2mOhms
|
Fairchild Semiconductor
|
| STP4931 |
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| CM75DU-12F |
Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CM75DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| FDT86244 |
150V N-Channel Power TrenchMOSFET
N-Channel Power Trench MOSFET
N-Channel Power Trench MOSFET
|
Fairchild Semiconductor
|
| PMDPB80XP |
20 V, dual P-channel Trench MOSFET
|
NXP Semiconductors
|
| PMDPB70XPE |
20 V dual P-channel Trench MOSFET
|
NXP Semiconductors
|
